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| e PTB 20077 0.7 Watts, 1525-1660 MHz INMARSAT RF Power Transistor Description The 20077 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 0.7 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. * * * * * * 0.7 Watt, 1525-1660 MHz Class A Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power vs. Input Power 1.2 Output Power (Watts) 1.0 0.8 0.6 0.4 0.2 0.0 0.00 VCC = 26 V ICQ = 120 mA f = 1.66 GHz 200 77 LO TC OD E 0.02 0.04 0.06 0.08 0.10 Input Power (Watts) Package 20227 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 60 60 4.0 0.5 5.4 0.031 -40 to +150 32.3 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20077 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions VBE = 0 V, IC = 5 mA IB = 0 A, IC = 10 mA, RBE = 22 IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA Symbol V(BR)CES V(BR)CER V(BR)EBO hFE Min 60 60 4.0 20 Typ -- -- 5 40 Max -- -- -- -- Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 25 Vdc, Pout = 0.2 W, ICQ = 120 mA, f = 1.525; 1.66 GHz) Power Output at 1 dB Compression (VCC = 25 Vdc, ICQ = 120 mA, f = 1.525; 1.66 GHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 0.7 W, ICQ = 120 mA, f = 1.66 GHz--all phase angles at frequency of test) Symbol Gpe Min 10 Typ 12 Max -- Units dB P-1dB 0.7 0.9 -- Watts -- -- 5:1 -- Typical Performance Gain (dB) & Output Power (Watt) 14 12 10 8 6 4 2 Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Gain (dB) Intermodulation Distortion vs. Output Power -10 40 35 -20 VCC = 26 V ICQ = 120 mA f1 = 1559.9 MHz f2 = 1666.0 MHz -40 -50 -60 -70 0.0 0.2 IM3 IM5 IM7 0.4 0.6 0.8 1.0 VCC = 26 V ICQ = 120 mA Output Power (W) Efficiency (%) 25 20 15 10 0 5 1300 1350 1400 1450 1500 1550 1600 1650 1700 Frequency (MHz) IMD (dBc) 30 Efficiency (%) -30 Output Power (Watts-PEP) 2 4/29/98 e Impedance Data VCC = 25 Vdc, Pout = 0.7 W, ICQ = 120 mA PTB 20077 Z Source Z Load Frequency GHz 1.30 1.40 1.45 1.50 1.55 1.60 1.70 R 10.3 10.0 9.7 9.5 9.3 10.0 10.0 Z Source jX -3.1 -3.5 -3.9 -4.2 -5.9 -4.9 -4.7 R 25.9 22.9 21.1 20.7 20.0 18.2 17.4 Z Load jX 39.8 40.0 38.6 37.7 35.5 33.8 31.0 Z0 = 50 Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF1 (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20077 Uen Rev. C 09-28-98 3 4/29/98 |
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